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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
A low-power, wideband-tunable, nano-dimension based CMOS LC ladder filter designed using GmC

This paper proposed LC-ladder filter based on transconductance (GmC) with 130 nm RF CMOS process technology node at 1.2 V. Further, a seventh-order low-pass filter prototype and a sixth-order band-pass filter prototype have been invented to prove high-frequency functioning in a way that is relatively suited for s-parameters modelling. The low pass and band pass elements […]

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Original Article
Design a low-power low-pass nano dimension based filter with high linearity for next-generation WSN

Wireless Sensor Networks (WSN) has received a lot of attention from around the world in the past year due to its broad application in the military, industrial, environmental sense, and other areas. WSNs are a crucial component of the Internet of Things (IoT) ecosystem. As the IoT continues to grow, WSNs will play a vital […]

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Original Article
Impact of nanometric buried Oxide layer on subthreshold swing and drain conductance of junctionless accumulation mode MOSFET for analog circuit applications

Drain conductance to drain current ratio is analytically investigated for junctionless accumulation mode MOSFET in presence of ultrathin buried oxide layer invoking the effect of conduction band tunnelling, within realistic range of dimensional configurations in nano regime. By taking into account the flatband voltage’s influence and the image charge effect at the oxide-semiconductor interface, subthreshold […]

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Original Article
A low leakage and high-speed phase frequency detector-charge pump designed in nano dimension based CMOS technology

This research paper undertakes an innovative investigation into the conceptualization and execution of charge pump circuits that are specifically engineered in nano-dimension MOS transistor. In contrast to traditional Dickson-charge-pump models, the suggested configuration incorporates MOS transistors and anti-phase pumping clocks, which substantially increase output voltages and voltage pumping advantages. The PLL system’s PFD, Charge Pump […]

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