This paper provides a possible solution to minimize the effect of temperature on nano-tube (NT) FETs by applying performance enhancers. Here high-k and dual metal gates(DMG) are used as performance boosters. The high-k downgrades the leakage issues and improves the on-state current(Ion), while dual metal gate suppresses the short-channel-effects (SCEs). Simulation results reflect that Ion […]
In this article, the high-k gate dielectric effect on the operation of complementary metal oxide semiconductor (CMOS) inverter build using conventional (CL) double-gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and junctionless (JL) double-gate (DG) MOSFET has been explored. It is found that the improvement in inverter performance is more pronounced in CL-DG-MOSFET based […]
This paper provides a possible solution to minimize the effect of temperature on nano-tube (NT) FETs by applying performance enhancers. Here high-k and dual metal gates (DMG) are used as performance boosters. The high-k downgrades the leakage issues and improves the on-state current (Ion), while dual metal gate suppresses the short-channel-effects (SCE). Simulation results reflect […]
