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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers

A novel and robust scheme for radix-4 Booth scheme implemented in Carbon Nanotube Field-Effect Transistor (CNTFET) technology has been presented in this paper. The main advantage of the proposed scheme is its improved speed performance compared with previous designs. With the help of modifications applied to the encoder section using Pass Transistor Logic (PTL), the […]

Original Article
Design of a low power high speed 4-2 compressor using CNTFET 32nm technology for parallel multipliers

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead […]

Original Article
Implementation of a programmable neuron in CNTFET technology for low-power neural networks

Circuit-level implementation of a novel neuron has been discussed in this article. A low-power Activation Function (AF) circuit is introduced in this paper, which is then combined with a highly linear synapse circuit to form the neuron architecture. Designed in Carbon Nanotube Field-Effect Transistor (CNTFET) technology, the proposed structure consumes low power, which makes it […]

Original Article
A study of emerging semi-conductor devices for memory applications

In this paper, a study of the existing SRAM (Static Random Access Memory) cell topologies using various FET (Field Effect Transistor) low power devices has been done. Various low power based SRAM cells have been reviewed on the basis of different topologies, technology nodes, and techniques implemented. The analysis of MOSFET(Metal Oxide Semiconductor Field Effect […]

Original Article
Low-power min/max architecture in 32nm CNTFET technology for fuzzy applications based on a novel comparator

In this paper, the design of a novel low-power Min/Max circuit using Carbon Nanotube Field-Effect Transistor (CNTFET) technology has been discussed. By employing a new structure for the implementation of digital comparator, a high performance configuration has been obtained which consumes small area on chip due to the low transistor count used for its implementation. […]