Journal of Theoretical and Applied Physics (JTAP) Non-relativistic particle under the Influence of Aharonov-Bohm Flux Field Subject to Physical Potentials and the Nikiforov-Uvarov Method Volume 16 (2022) Issue 4, December 2022 2023 11 17 Non-relativistic particle under the Influence of Aharonov-Bohm Flux Field Subject to Physical Potentials and the Nikiforov-Uvarov Method 10.30495/JTAP.162233 EN Faizuddin Ahmed Department of Physics, University of Science and Technology Meghalaya, Ri-Bhoi, Meghalaya-793101, India 0000-0003-2196-9622 Kayser Ahmed Department of Physics, University of Science and Technology Meghalaya, Ri-Bhoi, Meghalaya-793101, India Akheruzzaman Ahmed Department of Physics, University of Science and Technology Meghalaya, Ri-Bhoi, Meghalaya-793101, India Ariful Islam Department of Physics, University of Science and Technology Meghalaya, Ri-Bhoi, Meghalaya-793101, India Bikash Pratim Barman Department of Physics, University of Science and Technology Meghalaya, Ri-Bhoi, Meghalaya-793101, India Journal Article 2023 11 17 In this work, the non-relativistic wave equation via the Schrödinger wave equation under the influence of the Aharonov-Bohm flux field Subject to physical potentials of various kinds is investigated. These potentials are modified Coulomb potential, modified harmonic oscillator potential, the Kratzer-Feus potential, and the Mie-type potential which have wide applications in different branches of physics and chemistry. We solve the Schrodinger wave equation using the Nikiforov-Uvarov (NU) method and obtain the energy profiles and the wave function of the non-relativistic particle, and analyze the effects of potential and the quantum flux on them. We show that each non-relativistic energy level gets modified in comparison to the known results obtained in the literature.

Journal of Theoretical and Applied Physics (JTAP) Influence of magnetic field and ionization on gradient driven instability in an E×B plasma Volume 16 (2022) Issue 4, December 2022 2023 11 17 Influence of magnetic field and ionization on gradient driven instability in an E×B plasma 10.30495/JTAP.162234 EN Munish Munish Department of Physics, Gargi College, University of Delhi, Delhi, India Plasma Science and Technology Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India 0000-0003-4258-5222 Dimple Sharma Plasma Science and Technology Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India Hitendra K. Malik Plasma Science and Technology Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India 0000-0002-9432-8140 Journal Article 2023 11 17 An E×B plasma is important for various applications including Hall thrusters and magnetic nozzle for long-lasting space propulsion. Such a cross field arrangement in inductively coupled plasma plays vital role in film deposition and etching that are the basic ingredients in semiconductor industries; though in these applications, only the electrons are magnetized which enhance the plasma production and hence, ultimately control the etching aspect ratio and film quality. In the present work, an E × B plasma is considered where ionization takes place and finite temperature gradient also exists. Specifically, a theoretical model is developed for analysing the effect of magnetic field on the density gradient driven instability. The growth rate of the instability is evaluated as a function of plasma background density, scale length of density gradient, ionization frequency, charge on ions, ion temperature gradient, temperatures of plasma species and magnetic field. To generalize the situation, case of different masses of the ions is also reviewed by considering both the electrons and the ions to be magnetized.

Journal of Theoretical and Applied Physics (JTAP) The dynamics of plasmoid instability in the presence of asymmetric parallel shear flow. Volume 16 (2022) Issue 4, December 2022 2023 11 17 The dynamics of plasmoid instability in the presence of asymmetric parallel shear flow. 10.30495/JTAP.162235 EN Hossein Lotfi Faculty of Physics, University of Tabriz, Tabriz, Iran 0000-0002-1135-3552 Mahboub Hosseinpour Faculty of Physics, University of Tabriz, Tabriz, Iran 0000-0001-8296-6981 Journal Article 2023 11 17 The nonlinear evolution of the magnetic reconnection and onset of the plasmoid instability are investigated by using 2.5-dimensional MHD simulations when the sheared plasma flow is anti-symmetric on either side of the boundary layer. In particular, we considered a wide range of velocity amplitude of shear flow (V0) (from sub-Alfvénic to level of super-Alfvénic) and the shear flow scale length (av) compared to equilibrium magnetic field scale length (aB). We found that sub-Alfvénic shear flows (here V0<0.6VA) can change the O-point position of magnetic islands. The plasmoid instability is suppressed with increasing shear flow velocity, and the Kelvin-Helmholtz instability appears instead of the plasmoid instability when the shear flow is of the order of the Alfvénic or larger. Thus, at the limit of Alfvénic velocity, the magnetic field lines twist near the magnetic reconnection site due to the presence of asymmetric shear flows. The shear flow scale length (or shear flow thickness) can have either stabilization or destabilization effects on the current sheet development. For sub-Alfvénic shear flow (here V0=0.8VA), avaB has a boosting effect on the plasmoid instability. Therefore, we found a critical value for the shear flow thickness that magnetic reconnection has the maximum value. The boosting effect of the shear flow on the current sheet becomes strongest at avc=1.2aB.

Journal of Theoretical and Applied Physics (JTAP) Transistors based on gallium nitride (GaN), growth techniques, and nanostructures Volume 16 (2022) Issue 4, December 2022 2023 11 17 Transistors based on gallium nitride (GaN), growth techniques, and nanostructures 10.30495/JTAP.162236 EN Hamidreza Ravanbakhsh Department of Physics, Amirkabir University of Technology, Tehran, Iran Leila Shekari Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Tehran, Iran Journal Article 2023 11 17 Gallium nitride(GaN) is a material with a wide and straight band gap of 3.39eV. This semiconductor has the crystal structure of Wurtzite as one of the most stable phases of matter in environmental conditions. This material and its alloys have a low intrinsic charge carrier density due to their wide band gap, but on the other hand, they have significant charge transfer properties. These include high electron mobility of about 1300cm2/Vs and usability in high-temperature applications due to its very high thermal conductivity. They also have a saturation velocity of about 2.5*107cm/S and a high breakdown electric field of about 3.5MV/cm compared to 0.3MV/cm for silicon. This paper discussed about the most important GaN crystal growth methods, such as Ammonothermal, Hydride Vapor Phase Epitaxy(HVPE), Sodium flux(Na-flux), Metal-Organic Chemical Vapor Deposition(MOCVD) and Molecular Beam Epitaxy(MBE). Each of these methods has its own advantages and drawbacks and is used in research and industrial fields. MOCVD and MBE techniques are more widely used than other techniques, and due to larger throughput and larger wafer size, MOCVD, is widely used in industrial applications. According to the articles, which were discussed in this paper, countries such as the United States, Japan, and Germany, among other countries, have focused more on these two methods. The most common nanostructures obtained from the studied methods are nanowires, quantum wells, quantum wires, quantum dots, and GaN nanoparticles. This paper mentioned that nanowires and quantum wells are the most widely used morphologies in the structure of GaN-based transistors. Over the past few years, countries such as the United States, South Korea, India, China, and Germany have focused more on the growth of widely used GaN nanostructures.

Journal of Theoretical and Applied Physics (JTAP) The spatial damping of electrostatic wave in Hall thruster beam plasma Volume 16 (2022) Issue 4, December 2022 2023 11 17 The spatial damping of electrostatic wave in Hall thruster beam plasma 10.30495/JTAP.162237 EN Saty Prakash Bharti Plasma Waves and Electric Propulsion Laboratory, Department of Physics, Central University of Rajasthan, Ajmer, Kishangarh- 305817, India Sukhmander Singh Plasma Waves and Electric Propulsion Laboratory, Department of Physics, Central University of Rajasthan, Ajmer, Kishangarh- 305817, India 0000-0002-6761-1303 Journal Article 2023 11 17 The magnetohydrodynamics model is used to investigate the spatial damping in a Hall thruster beam plasma under the effect of thermal motion and electron beam density. Plasma dispersion equation is derived analytically using the normal mode analysis of the small oscillations. The dispersion equation is solved numerically to find out the damping modes in a Hall thrusters plasma. The damping length shows dependence on the radial magnetic field, beam density, ion density, electron drift velocity, collision frequency, electron and ion temperature. We investigated that the damping length increases with ion density and electron-ion temperature, whereas it decreases with the radial magnetic field, beam density, electron drift velocity and collision frequency.

Journal of Theoretical and Applied Physics (JTAP) Multi-lump solutions to the KPI equation with a zero degree of derivation Volume 16 (2022) Issue 4, December 2022 2023 11 17 Multi-lump solutions to the KPI equation with a zero degree of derivation 10.30495/JTAP.162238 EN Pierre Gaillard Universit ́e de Bourgogne Franche Comt ́e, Institut de math ́ematiques de Bourgogne, Dijon Cedex, France Journal Article 2023 11 17 We construct solutions to the Kadomtsev-Petviashvili equation (KPI) by using an extended Darboux transform. From elementary functions we give a method that provides different types of solutions in terms of wronskians of order N. For a given order, these solutions depend on the degree of summation and the degree of derivation of the generating functions. In this study, we restrict ourselves to the case where the degree of derivation is equal to 0. In this case, we obtain multi-lump solutions and we study the patterns of their modulus in the plane (x,y) and their evolution according time and parameters.

Journal of Theoretical and Applied Physics (JTAP) Improved efficiency of a SiGe thin film solar cell structure using CNT charge collector layer Volume 16 (2022) Issue 4, December 2022 2023 11 17 Improved efficiency of a SiGe thin film solar cell structure using CNT charge collector layer 10.30495/JTAP.162239 EN Homa Hashemi Madani Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran Mohammad Reza Shayesteh Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran 0000-0002-1485-2656 Mohammad Reza Moslemi Department of Electrical Engineering, Zarghan Branch, Islamic Azad University, Zarghan, Iran Journal Article 2023 11 17 In this study, a SiGe (Si(1-X) GeX x=0.1) thin film solar cell structure based on the carbon nanotube charge collector (CNT) is investigated. The addition of the carbon nanotube layer to cell structure has been proven to change aspects of its physical characteristics, specifically the efficiency of the solar cell. This means that CNT can have a significant impact on structure. The efficiency of suggested structure is 27.72%, which is higher than conventional structures without CNT layer. We optimize this structure by varying the cell layers thickness and calculating the ratio of the top metal contact to the total cell width. Furthermore, the performance of this cell is considering in present of two types of CNT layers with sheet resistances of 128Ω/□ and 76Ω/□. According to numerical simulation CNT layer with 128 Ω/□ sheet resistance has better performance parameters. Finally, the number of metal electrodes above the cell is optimized due to the shading effect and we show that the contact distance in the presence of CNT layer can be increased up to 1000 μm. The cell efficiency after this optimization reaches 30.9%.

Journal of Theoretical and Applied Physics (JTAP) Modified Bohm’s criterion in a collisional electronegative plasma having two-temperature non-extensive electrons Volume 16 (2022) Issue 4, December 2022 2023 11 17 Modified Bohm’s criterion in a collisional electronegative plasma having two-temperature non-extensive electrons 10.30495/JTAP.162240 EN Rajat Dhawan Plasma Science and Technology Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India 0000-0002-7673-0144 Mayand Malik School of Engineering, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, India 0000-0001-9893-0027 Hitendra K. Malik Plasma Science and Technology Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India 0000-0002-9432-8140 Journal Article 2023 11 17 Plasma-material interaction has been a subject of interest for the past several decades due to its importance in various fields of research such as film deposition, surface nitriding, plasma etching, plasma reactors at low-pressure conditions etc. During this interaction, the presence of negative ions further plays a vital role to ease defect-free analysis of soft substrates. The response of plasma through the sheath formation, when a metallic plate or probe is inserted into it, depends on the plasma characteristics / parameters and the bias voltage used on the plate or probe. The Bohm’s criterion decides such kind of interaction. The present work theoretically demonstrates a modified Bohm’s criterion in an electronegative plasma which is collisional and has two-temperature non-extensive electrons (hot and cold electrons). The behaviour of positive ions is considered through their fluid equations, whereas the negative ions are taken to follow Boltzmann distribution. While writing the basic equations, ion source term and ionization rate are retained and Sagdeev’s potential approach is employed to evaluate the Bohm’s criterion which reveals a band for the positive ion velocity, means maximum and minimum values for the ion velocity. This modified Bohm’s criterion is studied under the effects of various plasma parameters.

Journal of Theoretical and Applied Physics (JTAP) Chemical and pharmaceutical waste disposal with thermal plasma pyrolysis-melting Volume 16 (2022) Issue 4, December 2022 2023 11 17 Chemical and pharmaceutical waste disposal with thermal plasma pyrolysis-melting 10.30495/JTAP.162241 EN Shahrooz Saviz Plasma Physics Research Center, Science and research branch, Islamic Azad University, Tehran, Iran 0000-0001-5874-3761 Davoud Dorranian Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran 0000-0001-8855-7425 Amir Hossein Sari Plasma physics research centre, Science and research branch, Islamic Azad University, Tehran, Iran Journal Article 2023 11 17 Thermal plasma treatment is considered as a suitable alternative for the treatment of highly-hazardous wastes such as industrial, radioactive and medical waste. Therefore, a Plasma-Gasification-Melting (PGM) system for treatment of Chemical and Pharmaceutical Wastes (CPW) with a capacity of 1 ton/day is developed using a melting and gasification furnace equipped with two non-transferred thermal plasma torches. In this article, the whole method of chemical and pharmaceutical waste disposal is presented along with exhaust gas analysis, and slag and energy balance approach for improving the relevant technology process. It is successfully demonstrated that the thermal plasma process converts chemical and pharmaceutical wastes into harmless slag. Also, the associated emission level of air pollutants is shown to be very low. The synthetic gas produced can be used as a source of energy. (11.7 Nm3 / hr for CO and 16.4 Nm3 / hr for H2). The total power consumption of the system is 120 k W including 90 kW for thermal plasma torch and 30 kW for utilities with natural gas flow rate of 1.3 Nm3/hr.

Journal of Theoretical and Applied Physics (JTAP) The influence of Hively and Bosch-Hale reactivities on hot ion mode in deuterium/helium-3 fuel Volume 16 (2022) Issue 4, December 2022 2023 11 17 The influence of Hively and Bosch-Hale reactivities on hot ion mode in deuterium/helium-3 fuel 10.30495/JTAP.162242 EN Armin Taghipour Department of Physics, Faculty of Science, University of Mazandaran, Babolsar, Iran 0000-0001-8278-0933 S. Mohammad Motevalli Department of Physics, Faculty of Science, University of Mazandaran, Babolsar, Iran 0000-0002-6923-3107 Fereshteh Fadaei Department of Physics, Payam Noor University, Tehran, Iran Journal Article 2023 11 17 Nowadays, there is much extensive research investigating nuclear fusion reaction with D-3He fuel as one of the most essential advanced fusion fuels. One of the most important quantities in fusion is the reactivity. In this work, with consideration of different temperatures for ion and electron (hot ion mode), we intend to study the effects of two different reactivities (Hively and Bosch-Hale) on D-3He fusion reaction in spherical tokamaks. Accordingly, by writing the system of particle and energy balance equations for this reaction in hot ion mode, we will investigate the effects of reactivities on plasma parameters in spherical tokamaks.

Journal of Theoretical and Applied Physics (JTAP) Bound state solutions and thermal properties of the N-dimensional Schrödinger equation with Varshni plus Woods-Saxon potential via Nikiforov-Uvarov method Volume 16 (2022) Issue 4, December 2022 2023 11 17 Bound state solutions and thermal properties of the N-dimensional Schrödinger equation with Varshni plus Woods-Saxon potential via Nikiforov-Uvarov method 10.30495/JTAP.162243 EN Ridha Horchani Department of Physics, College of Science, Sultan Qaboos University, Al-Khod, Muscat, Sultanate of Oman Safa Al-Shafii Department of Physics, College of Science, Sultan Qaboos University, Al-Khod, Muscat, Sultanate of Oman Noora Al-Hashimi Department of Physics, College of Science, Sultan Qaboos University, Al-Khod, Muscat, Sultanate of Oman Akpan N. Ikot Department of Physics, Theoretical Physics Group, University of Port Harcourt, Choba, Nigeria 0000-0002-1078-262X Ituen B. Okon Department of Physics, University of Uyo, Uyo, Nigeria Uduakobong S. Okorie Department of Physics, Akwa Ibom State University, Ikot Akpaden, Nigeria 0000-0002-5660-0289 Carlos A. Duque Grupo de Materia Condensada-UdeA, Instituto de F´ısica, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Medell´ın, Colombia Enock O. Oladimeji Department of Physics, Federal university Lokoja (FULOKOJA), Lokoja, Nigeria 0000-0001-5500-8382 Journal Article 2023 11 17 We have solved the Schrödinger equation for Varshni plus Woods-Saxon potential in N-dimensions within the framework of Nikiforov-Uvarov method by using Greene-Aldrich approximation scheme to the centrifugal barrier term. We obtained the numerical bound state energies for both physical parameters and some diatomic molecules for various values of screening parameter which characterizes the strength of the potential. We obtained the energy eigen equation in a closed and compact form and applied it to study partition function and other thermodynamic properties as applied to four selected diatomic molecules namely: Nitrogen (N2), Carbon (II) Oxide (CO), Nitrogen Oxide (NO) and Hydrogen (H2) molecules, respectively using experimentally determined spectroscopic parameter. The numerical energy eigenvalues obtained both for physical parameters and for selected diatomic molecules at various dimensions (N = 2, 4 and 6 ) reveals that constant degeneracies occurs for S and P quantum state. The result also shows that 1S-quantum state has the highest bound state energies which are experimentally verified because of its proximity to the nucleus of an atom. To ascertain the accuracy of our work, the thermodynamic spectral diagram produces an excellent curves as compared to work of an existence literature. This research has application in the field of molecular spectroscopy.

Journal of Theoretical and Applied Physics (JTAP) On the correspondence principle for the Klein-Gordon and Dirac Equations Volume 16 (2022) Issue 4, December 2022 2023 11 17 On the correspondence principle for the Klein-Gordon and Dirac Equations 10.30495/JTAP.162244 EN Kevin G. Hernandez Department of Physics, University of El Salvador, Ciudad Universitaria, San Salvador, El Salvador 0000-0002-5739-3859 Sergio E. Aguilar-Gutierrez Department of Physics, University of El Salvador, Ciudad Universitaria, San Salvador, El Salvador Instituut voor Theoretische Fysica, K.U. Leuven, Leuven, Belgium 0000-0003-0308-0061 Jorge Bernalc Division Academica De Ciencias Basicas, Universidad Juarez Autonoma de Tabasco, Cunduacan, Tabasco, Mexico Journal Article 2023 11 17 We investigate the asymptotic behavior of the solutions to the Klein-Gordon and Dirac equations using the local spatial averaging approach to Bohr's correspondence principle in the large principal quantum number regime. The procedure is applied in two basic problems in $1+1$-dimensions, the relativistic quantum oscillator and the relativistic particle in a box. In the harmonic oscillator cases, we find that the corresponding probability densities reduce to their respective classical single-particle distributions plus a series of terms suppressed by powers of the $hbar$ constant, while particle in a box cases show a different structure for the quantum corrections.

Journal of Theoretical and Applied Physics (JTAP) Properties of nanoscale copper oxide thin film deposited by plasma focus device Volume 16 (2022) Issue 4, December 2022 2023 11 17 Properties of nanoscale copper oxide thin film deposited by plasma focus device 10.30495/JTAP.162245 EN Hasan Anousha Department of Physics, Faculty of Basic Sciences, Sahand University of Technology, Tabriz, Iran 0000-0001-9395-5292 Journal Article 2023 11 17 In this study, a 2 kJ plasma focus device of Mather type was employed to grow Copper Oxide (CuO) thin film at room temperature on the glass substrate. The anode of the device was made of Copper alloys. A mixture of oxygen and argon (O2+ Ar) gases was used as the working gas for CuO deposition. CuO nanoparticles were formed on glass with 0° of the degree concerning the anode axis by 25 shots at 9 cm above the anode. Then CuO thin film prepared by this method was analyzed for their structure, optical, and electrical properties. According to the XRD results, The Crystallite size of the CuO thin film is between 64 and 122 nm. FESEM images show the nanoparticles growing on the surface almost in a clustered form and with an average value of 80 nm. UV-Vis results indicated that the deposited CuO thin film is found have very low transmittance at the UV region with an increasing transmittance at the visible region to a high transmittance at the near Infrared region. Using UV–vis spectra, the band gap energy and refraction index equals 1.8 eV and 1.9, respectively. The I–V diagram shows that as the applied voltage increases, the current intensity increases exponentially. By a four-probe method, the electrical resistance of CuO thin film is 0.68 ×103 Ω cm, and the dc conductivity for CuO film is equal 13.2 S/m.