Journal of Theoretical and Applied Physics (JTAP) Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode Volume 9 (2015) Issue 4, November and December 2015 2023 11 17 Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode 10.1007/s40094-015-0191-7 EN Journal Article 2023 11 17 AbstractThe current–voltage (I–V) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions and modified Norde’s function were used to extract the diode parameters including ideality factor, series resistance and barrier height. The parameter values obtained from these four different methods were found in good agreement.