Journal of Theoretical and Applied Physics (JTAP) Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model Volume 13, 2019 Issue 1, March and April 2019 2023 11 17 Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model 10.1007/s40094-019-0324-5 EN Murat Onen Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA 0000-0002-9078-2901 Marco Turchetti Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA Journal Article 2023 11 17 AbstractWe report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.