International Journal of Nano Dimension (Int. J. Nano Dimens.) Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD) Volume 3 (2012) Issue 1, July 2012 2024 03 01 Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD) 10.7508/ijnd.2012.01.004 EN H. Hoseinkhani Department of physics, Faculty of science, I.H.U Tehran, Iran. M. A. Talebian Darzi Department of physics, Faculty of science, I.H.U Tehran, Iran. M. Abdollahi Department of physics, Faculty of science, I.H.U Tehran, Iran. Journal Article 2024 03 01 Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time solution of time-dependent Schrödinger equation, under effective mass approximation by using finite difference method. The    self-consistent properties of the system solution of the time-dependent Schrödinger coupled with poisson equations have been self-consistently solved and the Hartree and exchange-correlation potentials as well as           the penetration of wave function in the barrier regions have been calculated. Electron density and potential energy are calculated in SCDQD. The interaction between the charge carriers and corresponding barriers causes the more drastic repulsion of charge carriers from the infinite wall than the barriers within the structure. The oscillatory structures in the active region are caused by the quantum effect of tunneling and depletion near the barriers.