<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ArticleSet PUBLIC "-//NLM//DTD PubMed 2.7//EN" "https://dtd.nlm.nih.gov/ncbi/pubmed/in/PubMed.dtd">
<ArticleSet>
		<Article>
		<Journal>
			<PublisherName>Majlesi Journal of Electrical Engineering</PublisherName>
			<JournalTitle>Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications</JournalTitle>
			<Issn></Issn>
			<Volume>Volume 16 (2022)</Volume>
			<Issue>Issue 4, December 2022</Issue>
			<PubDate PubStatus="epublish">
                <Year>2024</Year>
                <Month>02</Month>
                <Day>11</Day>
			</PubDate>
		</Journal>
		<ArticleTitle>Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications</ArticleTitle>
		<VernacularTitle></VernacularTitle>
		<FirstPage></FirstPage>
		<LastPage></LastPage>
		<ELocationID EIdType="doi">10.30486/mjee.2022.696519</ELocationID>
		<Language>EN</Language>
		<AuthorList>
            			<Author>
                				<FirstName>Farshad</FirstName>
				<LastName>Shirani Bidabadi</LastName>
				<Affiliation>ShahrekoShahrekord University, Department of Technology and Engineering, Shahrekord, Iranr University</Affiliation>
				<Identifier Source="ORCID"></Identifier>
			</Author>
            			<Author>
                				<FirstName>Sayed</FirstName>
				<LastName>Vahid Mir-Moghtadaei</LastName>
				<Affiliation>Shahrekord University, Department of Technology and Engineering, Shahrekord, Iran</Affiliation>
				<Identifier Source="ORCID"></Identifier>
			</Author>
            		</AuthorList>
		<PublicationType>Journal Article</PublicationType>
		<History>
			<PubDate PubStatus="received">
				<Year>2024</Year>
				<Month>02</Month>
				<Day>11</Day>
			</PubDate>
		</History>
		<Abstract>This paper presents a broadband low-power CMOS low noise amplifier (LNA) in 130 nm technology for sub-GHz Internet of Things (IoT) applications. The proposed circuit consists of a current reuse common source amplifier (CSA) in the forward path, and a positive simple transconductance amplifier (PSTA) in the feedback path. Theoretical calculation of the input admittance shows a positive part that presents a parallel inductance. This equivalent parallel inductance in the input can cancel out the input capacitance of CSA and electrostatic discharge (ESD) pad, enhancing the frequency bandwidth in the sub-GHz frequency band. Post-layout was simulated including ESD pads and package model in 130 nm CMOS technology, LNA achieves a voltage gain of 16.5 dB in a frequency bandwidth of 50 MHz to 1.1 GHz, noise figure (NF) of less than 2.4 dB, input return loss (S11) of -11 dB, input third order intercept point (IIP3) of -11 dBm and 1 mW power consumption from a 1 V power supply, showing a good figure of merit compared to other works. The occupied core area is less than 0.002 mm2.</Abstract>
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				<Param Name="value">IoT</Param>
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						<Object Type="keyword">
				<Param Name="value">Low-power</Param>
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						<Object Type="keyword">
				<Param Name="value">Sub-GHz CMOS LNA</Param>
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				<Param Name="value">Broadband LNA</Param>
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